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Saturday, 31 August 2013

Samsung starts mass producing DDR4 memory with using 20nm Process Technology

Samsung starts mass producing DDR4 memory:


The division of the Korean giant Samsung Electronics launched DDR4 memory in mass production. This new generation of RAM used chips manufactured in process of 20nm, representing a significant leap.

Thanks to the reduction of the manufacturing process and other internal improvements DDR4 memory, according to Samsung, is 25% faster than the DDR3 memory and consumes 30% less. Specifying a little, and to give you an idea, the rate of transfer of this type of memory is 2,667 Mb/s. In regards to the capacity of modules, these will come in 4 GB, 8 GB, 16 GB and 32 GB sizes.

It seems that the first modules that will be released will be 16 GB and 32 GB, which will be aimed at the professional market and to servers.

At the moment we do not have prices, but we imagine will be high, as often happens with the news. We do not know when will launch Samsung modules in sizes of 4 GB and 8 GB, more accessible to the normal user.


Samsung Electronics, the world’s largest maker of dynamic random access memory, on Friday said it had begun mass producing DDR4 memory, for next-generation enterprise servers in future data centers, using 20nm process technology. The first servers with DDR4 memory modules will become available sometimes in 2014.

Early market availability of the 4Gb DDR4 devices, which are made using 20nm-class process technology, will facilitate demand for 16GB and 32GB memory modules. The 4Gb-based DDR4 has the fastest DRAM data transmission rate of 2667MHz, 25% increase over 20nm-class DDR3, while lowering power consumption by more than 30%. Actual 32GB DDR4 DIMMs will operate at 2133MHz. 

Based on Samsung’s 20nm-class DRAM, the world’s highest performing and smallest 4Gb DRAM chip, the company has now developed the industry’s largest lineup of products tailored to applications from servers to mobile devices. This will provide global customers with the widest range of highly advanced low-power, high-performance green memory solutions.

With the introduction of these high-performance, high-density DDR4 modules, Samsung can better support the need for advanced DDR4 in rapidly expanding, large-scale data centers and other enterprise server applications.


In next-generation enterprise servers, the use of higher speed DRAM raises system level performance and lowers overall power consumption significantly. By adopting DDR4 memory technology early, OEMs can minimize operational costs and maximize performance to provide more favorable returns on investments.

Production of Samsung’s 20nm-class 4Gb DDR4 follows the introduction of 50nm-class 2Gb DDR3 in 2008, culminating in a full-fledged transition to DDR4 for large-scale data centers and other enterprise applications in just five years.

“The adoption of ultra-high-speed DDR4 in next-generation server systems this year will initiate a push toward advanced premium memory across the enterprise. After providing cutting-edge performance with our timely supply of 16GB DDR3 earlier this year, we are continuing to extend the premium server market in 2013 and will now focus on higher density and added performance with 32GB DDR4, and contribute to even greater growth of the green IT market in 2014,” said Young-Hyun Jun, executive vice president of memory sales and marketing at Samsung Electronics.


Samsung has begun mass production of the "industry's most advanced" DDR4 memory, destined for the next-generation of enterprise servers and data centers. The company is touting their DRAM as being the highest performing yet, while also reducing power consumption significantly compared to DDR3 RAM.

The 4-gigabit chips Samsung are producing, which use 20nm-class technology, will eventually make its way into 16 GB and 32 GB memory modules. The chips are expected to deliver a data transmission rate of 2.667 gigabits per second, which is 1.25x the speed achieved with 20nm-class DDR3 RAM.

In late 2012, JEDEC finalized the DDR4 specification, which promised more performance, reliablity and efficiency compared to current DDR3 modules. DDR4 DRAM will be capable of 1.6 GT/s (gigatransfers per second) to 3.2 GT/s per pin, while running at a lower 1.2 volts, down from the 1.5 volts required for DDR3 memory.

Samsung hasn't specified when their DDR4 RAM modules will be available to purchase, or how much they'll cost, but the company claims that through using their 4 Gb DDR4 chip, they've developed "industry's largest lineup of products tailored to applications from servers to mobile devices".


Earlier this year, a leaked Intel Xeon roadmap stated that DDR4 support would come to servers sometime in 2014 with 'Haswell-E' processors. Intel's 'Haswell-E' processors might also bring DDR4 support to desktop systems in the second half of 2014, as might 'Broadwell' around the same time, but Intel has yet to confirm support for the technology in any of their products.





2 comments :

  1. hi..Im student from Informatics engineering, this article is very informative, thanks for sharing :)

    ReplyDelete
    Replies
    1. hmm okay ..> thanx for your approach too ..

      Delete

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